Abstract
The differential cross section for an electron Ramanscattering process in a semiconductor quantum well wire (QWW)and in a free-standing wire of cylindrical geometry involvingphonon-assisted transitions is calculated for T = 0 K. A completedescription of the phonon modes of cylindrical structures embeddedin another material, including a correct treatment of the mechanicaland electrostatic matching conditions at the surface, is presented.We consider the Fröhlich interaction to illustrate the theoryfor a GaAs/AlAs system. Electron states are considered to beconfined within a QWW with finite and infinite potential barriers.We also assume single parabolic conduction and valence bands. Theemission spectra are discussed for different scatteringconfigurations and the selection rules for the processes are alsostudied. Singularities in the spectra are found and interpreted.
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