One-dimensional ZnO nanostructure-based optoelectronics**Project supported by the National Major Research Program of China (Grant No. 2013CB932602), the National Key Research and Development Program of China (Grant No. 2016YFA0202701), the Program of Introducing Talents of Discipline to Universities, China (Grant No. B14003), the National Natural Science Foundation of China (Grant Nos. 51527802, 51232001, 51602020, 51672026, and 51372020), China Postdoctoral Science Foundation

Abstract

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.