One-dimensional SiC nanostructures: Designed growth, properties, and applications

Abstract

Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.