Abstract
Heavy metal pollutants in wastewater are a major environmental concern. In order to fabricate metal organic composite for adsorption of these pollutants, in a first step a pristine and several nitrogen doped graphene films were synthesized by chemical vapor deposition method. Preparation of graphene films was performed through a one-step co-growth of naphthalene and urea mixture as an inexpensive and easy technique to handle solid precursors. This was done over a copper catalyst at different growth temperatures. Different characterization methods including Raman spectroscopy, elemental analysis, and X-ray diffraction confirmed the quality of the pristine and doped graphene. This technique showed an increasing trend of the doping level (nitrogen concentration up to 5.1% overall) as the growth temperature decreased. Results showed that both nitrogen doping, and carrying the synthesis at higher temperatures increase the defects and wrinkles in the graphene. Furthermore, doping introduced a light shift in defect types from vacancy in pristine graphene to boundary type in nitrogen-doped samples, which are favorable for functionalization for environmental applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Inorganic and Organometallic Polymers and Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.