One-step lateral growth for reduction in defect density ofa-plane GaN onr-sapphire substrate and its application in light emitters

Abstract

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm -2 and 103 cm -1 , respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density.