Abstract

Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

Highlights

  • Gallium nitride (GaN) has become one of the most promising semiconductors because of its excellent properties, which include wide direct bandgap, high thermal stability, excellent electron velocities, and superior chemical and physical stabilities[1,2]

  • Correspondence and requests for materials should be addressed to X.H. www.nature.com/scientificreports/

  • We have successfully demonstrated the separation of large-area, free-standing, and single-crystalline porous gallium nitride (GaN) membranes through a one-step high-temperature annealing technique, for the first time

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Summary

Introduction

Gallium nitride (GaN) has become one of the most promising semiconductors because of its excellent properties, which include wide direct bandgap, high thermal stability, excellent electron velocities, and superior chemical and physical stabilities[1,2]. GaN membrane-based light-emitting diodes[4], normally off enhancement-type GaN membrane metal oxide semiconductor transistors[5], and GaN membrane-based flexible optoelectronic devices[6] have been fabricated These devices exhibit excellent performance, especially in terms of energy storage; n-type single-crystal GaN porous membrane was used as electrode of the supercapacitor, which exhibits excellent cycling lifespan and ultrahigh power density[7]. The GaNPM-based supercapacitors are fabricated and exhibit excellent electrochemical properties, which proved that GaNPM is a potential supercapacitor electrode material that can be applied to high-power urgent electrochemical energy storage

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