Abstract
Films of Cu–In–Se alloys can be electrodeposited in a wide range of controlled composition. Annealing treatments under Se pressure transform these precursor films in large grain CuInSe2 films with improved electronic properties. These modifications are shown to depend on the Se pressure imposed during the treatment allowing a certain tailoring of the electronic properties of the films. The properties of electrodeposited/selenized films are presented as obtained from luminescence measurements, Hall effect, and photoelectrochemical characterization. An efficiency of 6.5% (total area, without antireflecting coating) is reported for the best CuInSe2/CdS/ZnO solar cell. An analysis of the device is also presented where limitations by interface recombination are shown to be the dominant loss mechanism.
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