One-Step CVD Synthesis of Few-Layer SnS2/MoS2 Vertical Heterostructures

Abstract

Constructing van der Waals (vdW) heterostructures with various-layered two-dimensional (2D) materials is attractive to design various materials and devices. For controllable fabrication of vdW heterostructures, it is very important to make the growth process clear. In this work, SnS2/MoS2 vertical heterostructures were synthesized by the one-step chemical vapor deposition (CVD) method. The bottom MoS2 triangle layers can be partially or completely covered by SnS2 layers. The interlayer charge separation was also observed in the heterostructures by photoluminescence (PL) spectroscopy. The growth mechanism of SnS2/MoS2 vertical heterostructures was also discussed for the first time. MoS2 triangle layers form on the substrates at first and then grow a top layer of SnS2. This study will provide an important and practical method, as a guidance to prepare high-quality vertical heterostructures.