Abstract
Owing to data storage ability of chalcogenide based Ge2Sb2Te5 phase change alloy, this composition has been tremendously explored for its application in memory devices. Upon annealing, this composition exhibit two step crystallization, i.e, amorphous -to- fcc, and then from fcc -to- hcp phase. To address the issue of power consumption in such phase transitions, the present study is reporting one-step crystallization in (Ge2Sb2Te5)90Ga10 thin film, i.e., from amorphous -to- fcc phase which is confirmed by optical transmission contrast studies. Thus, the results poses the promising data storage applicability of (Ge2Sb2Te5)90Ga10 thin film in phase change memory devices.
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