Abstract
In this work, we display one-step reactions under autogenic pressure at elevated temperature (RAPET) method-based synthesis of Mn-doped GaN nanorods by varying the atomic ratio of Mn:Ga as 0, 0.02, 0.04, 0.06 and 0.08, respectively. The synthesised nanorods are characterised by X-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and Raman spectral methods. It is observed that there is a decrease in the lattice constant with an increase in the concentration of Mn (from 0.02 to 0.08 wt%). Moreover, the smaller covalent radius of Mn is the key for the doping process. The Mn-doped GaN nanocrystals show rod-like morphology with a length of 40–50 nm and width of 8–12 nm. This size factor mainly depends on the doping of Mn [from transmission electron microscopy (TEM) analysis] into GaN components. Well-defined lattice fringes are elucidated for the growth of crystalline hexagonal GaN (wurtzite type) nanocrystals.
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