Abstract
Recently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal defects occurring due to cyclic compressive stress were observed. However, there is rare evidence of those defects inducing fatigue damage under cyclic stress. This paper presents a result of strength comparison of silicon structures with and without cyclic compressive stress applying before static strength tests. The reduce of static strength induced by compressive fatigue shows another evidence supporting damage growth inside silicon MEMS structures.
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