Abstract
One-dimensional (1D) bismuth and bismuth sulfide nanowires have been successfully fabricated. The diameter of bismuth nanowires was precisely controlled from 66 to 25 nm using atomic layer deposition (ALD) and IR absorption characteristics were investigated. Bismuth sulfide (Bi2S3) nanowires were synthesized by biomolecule-assisted synthesis, which resulted in high crystallinity and good uniformity, with diameters of (50 {plus minus} 10) nm and lengths of (1.9 {plus minus} 0.2) µm. Their morphology was controlled by changing the sulfur sources. To assess their electrical properties, we fabricated nanowire transistors with a back-gate structure. The as-grown nanowires are found to be n-type semiconductors and the on-off ratio of the transistors is about 102 with a silicon dioxide layer of 50 nm thickness as the gate insulator.
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