One-dimensional to one-dimensional electron resonant tunneling in a double asymmetric quantum-wire structure

Abstract

An atomically precise double asymmetric quantum-wire structure was fabricated with the cleaved edge overgrowth method. A resonant tunneling diode for such a structure was successfully achieved. Its voltage–current characteristic was measured at 77 K. A sharp resonant tunneling current peak was observed and its peak-to-valley ratio is about 18:1, which is much larger than that of a double-barrier quantum-well structure, and it is ascribed to one-dimensional to one-dimensional electron resonant tunneling through the double asymmetric quantum-wire structure.