One-dimensional, self-organized Si dots grown by pulsed laser melting of a-Si:H films

Abstract

We report a new method for one-dimensional, self-organized, nanometer-sized crystalline silicon (nc-Si) dots growth through pulsed laser-induced melting followed by regrowth of a-Si:H films. A transient thermal grid was generated by a high energy KrF excimer laser through a phase shifting mask grating directly on the samples, leading to local phase transitions. The hemispherically shaped nc-Si dots with sizes of ∼200 nm in diameter and ∼20 nm in height were grown and self-organized along the lines of the grating. The microstructures and crystallinity of the nc-Si dots were determined using atomic force microscope images and cross-section transmission electron microscope photographs; and the growth mechanism of self-organized nc-Si dots is also discussed.