Abstract
The temperature dependence of the conductance of porous silicon doped with manganese up to densities corresponding to the metallic side of the Anderson transition is investigated. It is found that in the temperature range below T=40–60 K the conductance decreases with T as G(T)∝T−1/3. This behavior corresponds to one-dimensional electron localization in silicon wires under conditions of inelastic electron-electron collisions with a small energy transfer.
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