Abstract
OPFET(Optical Field Effect Transistor) is an useful device for optical communication and as photo detector. In this paper, the I-V characteristics of back illuminated device are plotted using finite difference methods. This is done by solving the one dimensional continuity equation for electrons by discretizing the problem domain. Finite-difference method is a means of producing sets of discrete numerical approximations to the derivative, often in a time-stepping manner. The I-V characteristics are plotted for different thicknesses of the device including substrate, for different absorption coefficients and different radiation flux densities.
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