Abstract
Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.
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