One-dimensional β–Ga2O3 nanostructures on sapphire (0001): Low-temperature epitaxial nanowires and high-temperature nanorod bundles

Abstract

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650–450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/ sapphire orientational relationship [201]||[0001] and [211]||[1120]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.