Abstract
Focused ion beam milling was used to fabricate on-chip unstable resonator cavity quantum well laser devices. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Perot cavity device, the unstable resonator cavity device exhibits a 2x diffraction limited beam. The preliminary results demonstrate that a much higher brightness can be reached in this class of broad area devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.