Abstract
Focused ion beam milling was used to fabricate on-chip unstable resonator cavity quantum well laser devices. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Perot cavity device, the unstable resonator cavity device exhibits a 2x diffraction limited beam. The preliminary results demonstrate that a much higher brightness can be reached in this class of broad area devices.
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