Abstract

Differential transmission line (DTL) interconnect is promising for global signal propagation in multilevel interconnect structure in Si CMOS. Gbps signal transmission through DTL on Si CMOS is discussed. We have also shown that the both delay time and power consumption of DTL global interconnect are become superior to that of the conventional RC global interconnect with repeaters as a technology node progressed, such as in below 90nm technology node.

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