Abstract

An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance and momentum of other on-chip components with TEM-wave propagation, a mode converter structure featured by a smooth bridge between the Ground coplanar waveguide (GCPW) with 50 Ω impedance and SPP T-line is proposed. To further reduce area, the converter is ultimately simplified to a gradual increment of groove with smooth gradient. The proposed SPP T-lines with the converter is designed and fabricated in the standard 65 nm CMOS process. Both near-field simulation and measurement results show excellent conversion efficiency from quasi-TEM to SPP modes in a broadband frequency range. The converter achieves wideband impedance matching (<−9 dB) with excellent transmission efficiency (averagely −1.9 dB) from 110 GHz–325 GHz. The demonstrated compact and wideband SPP T-lines with mode converter have shown great potentials to replace existing waveguides as future on-chip THz interconnects. To the best of the author’s knowledge, this is the first time to demonstrate the (sub)-THz surface mode conversion on-chip in CMOS technology.

Highlights

  • Meta-devices are recently found as key technology to shape the future realization of high speed, low power on-chip communication as they can be deployed to manipulate EM-field to provide extraordinary performances at THz

  • For the far-infrared, THz, and microwave frequency bands, metals behave akin to perfectly electrical conductors (PECs), and surface plasmon polaritons cannot be supported by a metal surface

  • The dual sides ground of Ground coplanar waveguide (GCPW) ensures impedance matching when quasi-TEM wave is injected into the structure while the gradient groove serves to mode evolution with smooth transformation of momentum

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Summary

Introduction

Meta-devices are recently found as key technology to shape the future realization of high speed, low power on-chip communication as they can be deployed to manipulate EM-field to provide extraordinary performances at THz. As on-chip interconnect, SPP T-lines need to operate at frequency somewhat higher than k0 so that it presents slow-wave effect with field localization for low loss transmission, while it should avoid the region higher than k0ns as the propagation length turns out to be extremely small.

Results
Conclusion

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