Abstract
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
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