Abstract
Stress effects on performance are quantified for a vacuum packaged silicon-on-insulator (SOI) MEMS gyroscope, including zero rate output (ZRO), scale factor (SF), and resonance frequencies. On-chip environmental sensors comprising released SOI-silicon resistors in a bridge measure the temperature and stress separately. Experimental results from a four-point bending test-bed lead to a system model to compensate the gyroscope ZRO using the environmental sensor outputs. The ZRO shift varied linearly with stress, with a measured maximum of 3.5 °/s for 533 kPa applied external stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
