Abstract
The paper introduces a novel concept of using metal bond-wires as on-chip antennas on low resistivity CMOS-grade silicon substrate based ICs. Simulation results indicate that bond-wires, which can be readily realized with high-precision industry-standard tools, can indeed be used as on-chip antennas operating from 30-60 GHz. In particular, the paper examines the input impedance and radiation characteristics of a bond-wire antenna operating at 30 GHz, using the ANSOFT high frequency structure simulator (HFSS) program employing the full-wave finite element method. The results show a minimum return loss of 14.24 dB and a gain of 0.22 dBi at 33.8 GHz. The radiation efficiency of the antenna is 74%, which is considerably higher than standard on-chip antennas.
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