On-wafer probing-kit for RF characterization of silicon photonic integrated transceivers.

Abstract

A wafer-level and high-efficiency radio frequency (RF) testing of a photonic device is highly desired in the fabrication and characterization of large-scale photonic integration circuits. In this work, we propose on-wafer probing kit designs, and demonstrate a damage-free, self-calibrated RF characterization of an integrated silicon photonic transceiver with a heterodyne mixing approach. Reduced or even free of fiber coupling off chip operation can be achieved with the on-wafer probing-kit to extract the frequency responses of broadband modulators and photodetectors in the photonic integration transceiver, with no requirement of electro-optical or opto-electrical calibration. A proof-of-concept probing kit is designed and fabricated with an on-chip electroabsorption modulator (EAM) and photodetectors by heterogeneously integrated III-V material on silicon substrate. On-wafer RF measurements with the self-calibration method are experimentally demonstrated with an accuracy analysis compared with the conventional swept-frequency method. The on-wafer and full-electrical test nature of the probing kit significantly advances performance monitoring of photonic integration circuits during chip fabrication, and promisingly offers predictable outcome and yield analysis before packaging.