Abstract
The National Institute of Standards and Technology has developed the capability to measure noise parameters on a wafer in the 1-12.4-GHz range. The authors describe the measurement method and the uncertainty analysis and present results of measurements on a highly reflective transistor. Typical standard uncertainties are within the range of 20-25 K in T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> , which is the minimum transistor noise temperature, and about 0.03 in the magnitude of Gamma <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">opt</sub> , which is the reflection coefficient for which T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> occurs
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