Abstract
In the realm of graph theory, recent developments have introduced novel concepts, notably the ν ε -degree and ε ν -degree, offering expedited computations compared to traditional degree-based topological indices (TIs). These TIs serve as indispensable molecular descriptors for assessing chemical compound characteristics. This manuscript aims to meticulously compute a spectrum of TIs for silicon carbide S i C 4 - I [ r , s ] , with a specific focus on the ε ν -degree Zagreb index, the ν ε -degree Geometric-Arithmetic index, the ε ν -degree Randić index, the ν ε -degree Atom-bond connectivity index, the ν ε -degree Harmonic index, and the ν ε -degree Sum connectivity index. This study contributes to the ongoing advancement of graph theory applications in chemical compound analysis, elucidating the nuanced structural properties inherent in silicon carbide molecules.
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