On the weak-field magnetoresistance of holes in Ge and Si

Abstract

The weak-field magnetoresistance in p-type Ge and Si is studied theoretically in the range from 77 to 300 K. The energy band model is based on the k⋅p perturbation calculations of Kane and includes both the nonparabolicity and the warped nature of the valence band. Light and heavy holes are included. Acoustic phonon, nonpolar optical phonon, and impurity scattering are considered. No adjustable parameters are introduced into the calculations and the material parameters are those applied successfully before to the low field mobility and Hall factor. Satisfactory agreement between theory and available experimental data is obtained. For Ge the agreement is quantitative throughout the temperature and impurity concentration ranges. For Si the agreement is good at 300 K. At 77 K the agreement in Si is satisfactory.