Abstract
Friction characteristics between the wafer and the polishing pad play an important role in the chemical-mechanical planarization (CMP) process. In this paper, a wafer/pad friction modeling and monitoring scheme for the linear CMP process is presented. Kinematic analysis of the linear CMP system is investigated and a distributed LuGre dynamic friction model is utilized to capture the friction forces generated by the wafer/pad interactions. The frictional torques of both the polisher spindle and the roller systems are used to monitor in situ the changes of the friction coefficient during a CMP process. Effects of pad conditioning and patterned wafer topography on the wafer/pad friction are also analyzed and discussed. The proposed friction modeling and monitoring scheme can be further used for real-time CMP monitoring and process fault diagnosis.
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