Abstract
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic R on transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related hole trap in the GaN buffer layers (Ea = E t − E v ∼ 0.9eV). These two parasitic effects can lead to long recovery time (> 1ks) after reverse bias stress.
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