On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures

Abstract

The ultimate quantum efficiency of electroluminescence in silicon diodes and p-i-n structures at room temperature is calculated. It is shown that the internal quantum yield of electroluminescence is about 10% and is implemented at optimal doping levels for the n-and p-type regions of silicon diodes, ∼1015 and 5×1016 cm−3, respectively. With a decrease in the Shockley-Read-Hall lifetimes of electrons and holes, the internal quantum yield of electroluminescence in silicon barrier structures drops. The physical processes related to the effect of excitons in silicon has much in common with those in electroluminescence, photoluminescence, and photoconversion. It is shown that only electroluminescent p-i-n structures are promising for use in silicon integrated circuits.