Abstract

The temperature dependences of the electronic quality factor and universal electrical conductivity of the n-type SixGe1-x alloy, as well as the dependence of the Seebeck coefficient on the specific and universal electrical conductivities are studied. Based on the measured thermoelectric parameters (Seebeck and thermal conductivity coefficients, specific resistance) the values of thermoelectric efficiency Z are calculated. The temperature dependences of universal electrical conductivity shows that the experimental points form almost a single set. This is due to the fact that changes of σ and B_E compensate each other. And, in general, the electronic quality factor BE performs scaling of thermoelectric quantities. The temperature dependences of thermoelectric efficiency shown that all SixGe1-x samples have a fairly high efficiency (≥7∙10-4 grad-1), the maximum of which is reached at about 700℃. The studied alloy were used as an element of a monolithic thermoelectric module.

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