Abstract
An analytical theory that makes it possible to determine the parameters of inversion points in current–voltage characteristics of high-voltage p–i–n rectifier diodes is suggested. All the main nonlinear processes (electron–hole scattering (EHS), Auger recombination, gap narrowing in a highly doped emitter) are considered. The temperature dependences of all the main parameters, including the bandgap, carrier (electron and hole) mobilities and diffusion coefficients, EHS, contact resistance and nonequilibrium carrier lifetime are taken into account. The predictions of the theory are compared with the results of adequate numerical experiments for a high-voltage (10 kV class) 4H-SiC p+–i–n diode. The numerical data obtained coincide well with the predictions of the analytical theory.
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