Abstract
Molecular dynamics simulation is used to study thermally activated migration of hydrogen atoms in graphone, a magnetic semiconductor formed of a graphene monolayer with one side covered with hydrogen so that hydrogen atoms are adsorbed on each other carbon atom only. The temperature dependence of the characteristic time of disordering of graphone via hopping of hydrogen atoms to neighboring carbon atoms is established directly. The activation energy of this process is found to be Ea=(0.05+-0.01) eV. The small value of Ea points to extremely low thermal stability of graphone, this being a serious handicap for practical use of the material in nanoelectronics.
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