Abstract
We propose a two layer model to describe the growth of silicon oxide (SiO2) during the thermal re-oxidation (02) of silicon oxynitride (Si0,:N) thin films previously deposited on silicon. Based on this model, the activation energy for the diffusion coefficient of oxygen through the oxynitride layer was determined. The value observed (3.67 eV) is much higher than the activation energy for oxygen diffusion in Si02 due to the small concentration of nitrogen in the oxynitride film.
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