Abstract
Under short-circuit (SC) testing SiC MOSFETs exhibit an exceptional increase of gate current (100’s mA) which is not observed in their Si counterparts. Electro-thermal TCAD simulations are capable to accurately mimic all the details of measured gate current waveforms (iG) by capturing multiple physical mechanisms. One of these mechanisms is the thermionic or Schottky emission effect occurring at extreme temperatures (>1300K) for relatively thick gate oxides (>40nm). For the first time, it is proven that TCAD tunneling models, recommended for very thin oxides (<3nm), are suitable to reproduce the thermionic effect and predict iG in SiC MOSFETs under SC test.
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