On the T2-dependence of the electrical resistivity of Pd and PdH films

Abstract

By vapor-quenching onto liquid-helium cooled substrates, Pd and PdH films of different thicknesses (5 nm < D < 50 nm were prepared and the T 2-dependence of the electrical resistivity was studied in situ By stepwise annealing, the degree of disorder could be systematically changed and the corresponding influence of the T 2-dependence was investigated. For pure Pd-films a T 2-dependence is observed in the range between 35 and 50 K. The corresponding coefficient (400 × 10 −6 μΩ cm K −2) is found to be independent of disorder and film thickness, but by a factor of 1.33 larger than for Pd bulk samples. The PdH x-films also show a T 2-dependence in the same temperature range, but with a significantly smaller coefficient, the value depending on whether the hydrogen is incorporated by an equilibrium or a non-equilibrium technique.