Abstract
AbstractIn the effective‐mass approximation, taking into account the image forces, the low‐energy electronic states in thin crystalline films, the transport relaxation time of current carriers, and electrical resistivity of the films are calculated when the scattering mechanism is connected with the randomly distributed on their boundary surfaces screened Coulomb and electric dipole impurity centres. It is shown that in some cases of thin solid film materials the image forces influence essentially the electronic states and their surface electrical resistivity.
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