On the structure of thin plasma‐treated thermal SiO2 films

Abstract

AbstractOxygen‐plasma‐treated thin thermal SiO2 films (15–100 nm) have been studied by Reflection High Energy Electron Diffraction (RHEED). The presence of unconventional type microcrystalline regions (not only tetrahedrally coordinated) in the amorphous matrix of the oxides is established. Thinner oxides (15–50 nm) are more sensitive to the plasma action. In general, oxygen plasma leads to an additional deformation and decomposition of the initial crystalline forms and causes a degradation of the electrical parameters of the samples.