Abstract
AbstractTiS1.7 crystals have been grown by vapour transport technique employing a two‐zone furnace with the temperatures of reaction and growth zone maintained at 1073 K and 973 K, respectively. We have measured the variation of electrical conductivity (s̀) with temperature (T) of TiS1.7 single crystals. It has been found that the conductivity increases at temperatures T > 433 K, which provides convincing evidence that the TiS1.7 crystal is a semiconductor. Another electronic characteristic of TiS1.7 crystals observed in the present investigation is the occurrence of voltage controlled negative resistance (VCNR) at a field of 32.1 V cm‐1 to 35.7 V cm‐1. All the polytypes of TiS1.7 were found to exhibit VCNR nearly at the same field which indicates that the VCNR is polytype independent property. The occurrence of VCNR has been explained on the intervally transfer of electrons in the conduction band.
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