Abstract
Monte Carlo simulations of n-MOSFETs show that the carrier distribution function in the channel has a high-energy tail with an effective temperature approaching the lattice temperature. This work presents a simple quantitative analysis of this effect. An analytical estimate of the high-energy tail is obtained which compares favourably with Monte Carlo simulations. The analytical expressions derived account for the behaviour of the high-energy tail for both equilibrium and non-equilibrium Maxwellian boundary conditions, i.e. the injection of `cold' and `hot' carriers across a field discontinuity.
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