Abstract
This paper presents an extensive experimental study of the Seebeck coefficients in several conductive materials offered by standard CMOS technology when subject to a high temperature gradient. The measurements have been carried out on specific devices designed and fabricated in high-temperature SOI technology, comprising: one heating element, several thermopiles with different combinations of materials, and two highly sensitive, low leakage SOI diodes used to calibrate the absolute temperature in different points of the structure. To increase the accuracy, the chip characterization is performed in a controlled temperature chamber, with different values of the environmental temperature in the range 20 °C to 40 °C. This analysis leads to the extraction of the relative Seebeck coefficients for all thermocouples made with specific CMOS materials and, from that, the absolute values for the various materials at high temperature.
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