Abstract
We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes are of emerging interest to the device community. The review covers various important aspects of the device such as the design space, substrate choice, edge termination efficacy, and last, but not least, the physics behind the avalanche breakdown in GaN. The study comprehends the reported impact ionization coefficients and how they may affect the device performances. Finally various reported GaN APDs are summarized and compared. We conclude that hole-initiated GaN APDs on free-standing GaN substrates can offer unprecedented advantages as ultraviolet light detectors, due to their ultra-high responsivity and low dark current.
Highlights
High gain ultraviolet (UV) light detectors are significant for various applications, such as medical imaging, optical communication, flame detection, chemical sensing, sterilization and purification, ozone sensing and detection, and various other emerging imaging applications for security
We present a review of GaN avalanche photodiodes
Solid-state-based avalanche photodiodes (APDs) look attractive for UV light detections since they can change the landscape of UV detection by offering more durability, lower cost, and surpassing the performance of a tube-based multiplier
Summary
We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes are of emerging interest to the device community. The review covers various important aspects of the device such as the design space, substrate choice, edge termination efficacy, and last, but not least, the physics behind the avalanche breakdown in GaN. The study comprehends the reported impact ionization coefficients and how they may affect the device performances. Various reported GaN APDs are summarized and compared. We conclude that hole-initiated GaN APDs on free-standing GaN substrates can offer unprecedented advantages as ultraviolet light detectors, due to their ultra-high responsivity and low dark current
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