Abstract
AbstractThe electronic Raman scattering of light on the donor levels in the semiconductors with direct band gap is revised, taking into account approximately the Coulomb interaction between the charge carriers (conduction electron and hole). Except for the scattering in the resonance energy domain, where the polariton effect is essential, the influence of the Coulomb interaction of the charge carriers on the scattering cross section is not significant.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
