Abstract
AbstractThe incorporation of hydrogen in vacancies and at void surfaces during hydrogenated amorphous silicon growth from a remote expanding thermal plasma (ETP) is systematically studied by variation of the mass growth flux Γa-Si:H and substrate temperatureTsub. An evident relation between the void incorporation and the growth parameters Γa-Si:H andTsubhas been observed. We speculate on a possible relation with the surface diffusion processes during deposition. An activation energy for surface diffusion during a-Si:H growth of 0.8-1.1 eV is obtained using this assertion, similar to the activation energy deduced from surface roughness evolution studies. For compact films hydrogen is predominantly present at vacancies, and a possible relation with the hydrogen removal mechanism during deposition is discussed.
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