Abstract
ABSTRACTWe have studied the solid phase epitaxial regrowth (SPER) of implantation (31P+11B+ (73Ge+ preamorphized)) amorphized silicon in the temperature range 500–600°C induced by Rapid Thermal Annealing (RTA) using Rutherford Backscattering and channeling measurements (RBS). Our results show rate enhancements (≃ 3.5–6.5) of the velocities of regrowth in all studied cases with respect to literature-reported values for furnace-induced SPER. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically-active interfacial defect sites during SPER.
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