Abstract
Abstract The electrical activity of the defective states in Er-doped Si has been investigated. The epitaxial layer of Si:Er was grown with the liquid-phase epitaxy method and showed optical emission at 1.54μm. The presence and activity of dislocations have been evidenced by the appearance of lines D1 and D2 in photoluminescence spectra and it has been confirmed by spectroscopic investigations of the existing deep levels, carried out by deep-level transient spectroscopy and optical deep-level transient spectroscopy analyses. We also characterized the defective states by means of charge collection scanning microscopy, namely the electron-beam-induced current (EBIC) and optical-beam-induced current (OBIC) techniaues. The minority-carrier diffusion length has been measured with the EBIC method. OBIC images reveal interesting lattice sites where local emission of charge carriers occurs.
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