Abstract
In this letter, we study the response time characteristics of lateral hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon metal-semiconductor- metal (MSM) photodetectors. Devices with response time of 71 μs under green light illumination with λ = 525 nm (the wavelength of choice for indirect X-ray imaging) have been fabricated. The results show 42-fold and 4.2-fold improvement over the state of art single layer a-Si:H and double layer a-Si:H/molybdenumdisulphide (MoS2) MSM detectors, respectively.
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