On the relationship between ∑3 n boundaries meeting at a triple junction

Abstract

Recently, microstructures with the dominance of {Sigma}3{sup n} grain boundaries have attracted considerable attention by researchers. Such microstructures are rather common in different recrystallized materials with relatively low stacking fault energy: f.c.c. metals and alloys, semiconductors with a diamond structure, and intermetallics with an L1{sub o} and L1{sub 2} structures. {Sigma}3{sup n} boundaries are formed mainly by multiple twinning, therefore microstructures consisting entirely of such boundaries are sometimes called ``twin-related``. These microstructures are thought to be of paramount significance for grain boundary engineering, i.e. for developing materials resistant to intergranular degradation such as grain boundary fracture and intergranular stress corrosion. The objective of this note is to clarify some vague matters pertaining to the relation between {Sigma} boundaries meeting at a triple junction.