Abstract
The radiation induced absorption spectra of crystalline and glassy SiO2 generally consist of broad overlapping A (450–650 nm), B (290–350 nm) and C (200–250 nm) bands1. Their relative intensities and distinct spectral positions slightly change in different types of crystalline and glassy SiO2 2. The absorption in the A band is attributed to the aluminium hole (Al/e+) and the C band region to E′ type defect centers3,4. Contrary to this is, the nature of the color centers forming the B band, is not determined. A more effective detection of this band in short time experiments as during stationary absorption measurements could indicate an unstable character of corresponding color centers in SiO2 5.
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